GISAXS analysis of Ge nanoparticles embedded ZnO thin films: The effect of oxygen partial pressure and thermal process on the nanostructured aggregations

BAM, BEGÜM; İDE, SEMRA; KEILBACH, Andreas; CEYLAN, ABDULLAH

doi:10.1016/j.mssp.2017.07.019

GISAXS analysis of Ge nanoparticles embedded ZnO thin films: The effect of oxygen partial pressure and thermal process on the nanostructured aggregations

Atıf İçin Kopyala

BAM B., İDE S., KEILBACH A., CEYLAN A.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.71, ss.145-150, 2017 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 71
Basım Tarihi: 2017
Doi Numarası: 10.1016/j.mssp.2017.07.019
Dergi Adı: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.145-150
Hacettepe Üniversitesi Adresli: Evet

Özet

Ge nanoparticles embedded in ZnO thin films (synthesized on p-type Si substrates) were investigated to explore their potential usage possibilities as diodes for opto-electronic devices and photovoltaics, thin-film transistors, and solar cells. Nano scale structural details under the effect of different gas pressure of O-2 may include some hints to understand and develop structure-property correlations of the focused type materials. With this purpose, GISAXS (Grazing-incidence small-angle X ray scattering) was used for 3D structural analysis of the films according to the thermal process (Rapid Thermal Annealing: RTA and Absence of Thermal Effect: AS-MADE) and O-2 partial pressure during the deposition of ZnO matrix.