GISAXS analysis of Ge nanoparticles embedded ZnO thin films: The effect of oxygen partial pressure and thermal process on the nanostructured aggregations

BAM, BEGÜM; İDE, SEMRA; KEILBACH, Andreas; CEYLAN, ABDULLAH

doi:10.1016/j.mssp.2017.07.019

GISAXS analysis of Ge nanoparticles embedded ZnO thin films: The effect of oxygen partial pressure and thermal process on the nanostructured aggregations

BAM B., İDE S., KEILBACH A., CEYLAN A.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.71, ss.145-150, 2017 (SCI-Expanded, Scopus)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 71
Basım Tarihi: 2017
Doi Numarası: 10.1016/j.mssp.2017.07.019
Dergi Adı: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.145-150
Hacettepe Üniversitesi Adresli: Evet

Özet

Ge nanoparticles embedded in ZnO thin films (synthesized on p-type Si substrates) were investigated to explore their potential usage possibilities as diodes for opto-electronic devices and photovoltaics, thin-film transistors, and solar cells. Nano scale structural details under the effect of different gas pressure of O-2 may include some hints to understand and develop structure-property correlations of the focused type materials. With this purpose, GISAXS (Grazing-incidence small-angle X ray scattering) was used for 3D structural analysis of the films according to the thermal process (Rapid Thermal Annealing: RTA and Absence of Thermal Effect: AS-MADE) and O-2 partial pressure during the deposition of ZnO matrix.