GISAXS analysis of Ge nanoparticles embedded ZnO thin films: The effect of oxygen partial pressure and thermal process on the nanostructured aggregations
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.71, pp.145-150, 2017 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 71
- Publication Date: 2017
- Doi Number: 10.1016/j.mssp.2017.07.019
- Journal Name: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.145-150
- Hacettepe University Affiliated: Yes
Abstract
Ge nanoparticles embedded in ZnO thin films (synthesized on p-type Si substrates) were investigated to explore their potential usage possibilities as diodes for opto-electronic devices and photovoltaics, thin-film transistors, and solar cells. Nano scale structural details under the effect of different gas pressure of O-2 may include some hints to understand and develop structure-property correlations of the focused type materials. With this purpose, GISAXS (Grazing-incidence small-angle X ray scattering) was used for 3D structural analysis of the films according to the thermal process (Rapid Thermal Annealing: RTA and Absence of Thermal Effect: AS-MADE) and O-2 partial pressure during the deposition of ZnO matrix.