BAM, B. Et Al. 2017. GISAXS analysis of Ge nanoparticles embedded ZnO thin films: The effect of oxygen partial pressure and thermal process on the nanostructured aggregations. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.71 , 145-150.

BAM, B., İDE, S., KEILBACH, A., & CEYLAN, A., (2017). GISAXS analysis of Ge nanoparticles embedded ZnO thin films: The effect of oxygen partial pressure and thermal process on the nanostructured aggregations. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.71, 145-150.

BAM, BEGÜM Et Al. "GISAXS analysis of Ge nanoparticles embedded ZnO thin films: The effect of oxygen partial pressure and thermal process on the nanostructured aggregations," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.71, 145-150, 2017

BAM, BEGÜM Ç. Et Al. "GISAXS analysis of Ge nanoparticles embedded ZnO thin films: The effect of oxygen partial pressure and thermal process on the nanostructured aggregations." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.71, pp.145-150, 2017

BAM, B. Et Al. (2017) . "GISAXS analysis of Ge nanoparticles embedded ZnO thin films: The effect of oxygen partial pressure and thermal process on the nanostructured aggregations." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.71, pp.145-150.

@article{article, author={BEGÜM ÇINAR BAM Et Al. }, title={GISAXS analysis of Ge nanoparticles embedded ZnO thin films: The effect of oxygen partial pressure and thermal process on the nanostructured aggregations}, journal={MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, year=2017, pages={145-150} }