Akademik Veri Yönetim Sistemi
10th International Conference on Electrical and Electronics Engineering (ELECO), Bursa, Türkiye, 30 Kasım - 02 Aralık 2017, ss.355-359
The design of a SiC semiconductor based three phase interleaved boost converter has been presented. The proposed SiC based converter has 27 kW output power and 201.6 V - 650 V input-output voltage ratings to be used in Electric Vehicle (EV) applications. The proposed SiC based converter has been compared with the Si IGBT based converter used in Toyota Prius (3rd Generation) Hybrid Electric Vehicle (HEV) in terms of the efficiency, converter size and power density. The validity of the proposed converter has been verified with the computer simulation results. The analytical loss calculations have been made for both converters with the commercial Si and SiC power semiconductors. The passive component sizes has been reduced by %40, and the total converter efficiency of %98.75 has been achieved by using the interleaved operation and SiC devices. The proposed converter thus found to be quite convenient to use in EV applications.