Noise behavior of tungsten oxide doped amorphous vanadium oxide thin films

celik O., DUMAN M.

SENSORS AND ACTUATORS A-PHYSICAL, vol.342, 2022 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 342
  • Publication Date: 2022
  • Doi Number: 10.1016/j.sna.2022.113629
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Biotechnology Research Abstracts, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Civil Engineering Abstracts
  • Keywords: Vanadium Oxide, Noise, Microbolometer, Amorphous semiconductors, A-VWOx, EXCESS NOISE, MICROBOLOMETERS
  • Hacettepe University Affiliated: Yes


Noise properties of a-VWOx thin films deposited by reactive DC sputtering technique for microbolometer ap-plications have been investigated. It was found from measurements that there is no random telegraph switching (RTS) noise of deposited films. Electrode material effects on the contact resistance were measured thereby using electrode structure consisted of two different metals. Various currents and electrode structures effects on 1/f noise measurements were studied. As a result of calculations, 1/f noise parameter was found as 3.2 x 10(-13). This situation shows that developed a-VWOx is notably a suitable material for microbolometer applications.