Metal-semiconductor-metal photodetector on as-deposited TiO2 thin films on sapphire substrate


Caliskan D., Butun B., ÖZCAN Ş. , Ozbay E.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol.31, no.2, 2013 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 31 Issue: 2
  • Publication Date: 2013
  • Doi Number: 10.1116/1.4794526
  • Title of Journal : JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Abstract

TiO2 thin films are prepared on c-plane sapphire substrates by the RF magnetron sputtering method. The performance of the Pt contact metal-semiconductor-metal (MSM) photodetector fabricated on as-deposited films is studied. The dark current density and the responsivity obtained were 1.57 x 10(-9) A/cm(2) at 5V bias and 1.73A/W at 50V bias, respectively. Breakdown is not observed up to 50V bias. Rise and fall times for the photocurrent were 7 and 3 s, respectively. Our results show that high quality MSM photodetectors can be fabricated without high temperature and complicated fabrication steps. (C) 2013 American Vacuum Society. [http://dx.doi.org/10.1116/1.4794526]