Metal-semiconductor-metal photodetector on as-deposited TiO2 thin films on sapphire substrate

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Caliskan D., Butun B., ÖZCAN Ş., Ozbay E.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol.31, no.2, 2013 (SCI-Expanded) identifier identifier


TiO2 thin films are prepared on c-plane sapphire substrates by the RF magnetron sputtering method. The performance of the Pt contact metal-semiconductor-metal (MSM) photodetector fabricated on as-deposited films is studied. The dark current density and the responsivity obtained were 1.57 x 10(-9) A/cm(2) at 5V bias and 1.73A/W at 50V bias, respectively. Breakdown is not observed up to 50V bias. Rise and fall times for the photocurrent were 7 and 3 s, respectively. Our results show that high quality MSM photodetectors can be fabricated without high temperature and complicated fabrication steps. (C) 2013 American Vacuum Society. []