The influence of ohmic back contacts on the properties of a-Si : H Schottky diodes


Ay İ. , Tolunay H.

SOLID-STATE ELECTRONICS, cilt.51, ss.381-386, 2007 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 51 Konu: 3
  • Basım Tarihi: 2007
  • Doi Numarası: 10.1016/j.sse.2006.12.001
  • Dergi Adı: SOLID-STATE ELECTRONICS
  • Sayfa Sayıları: ss.381-386

Özet

We have investigated the temperature dependence of the current-voltage (I-V) characteristics of Au/a-Si:H Schottky structures using different back metal ohmic contacts (At, Cr, Mg or combination of Mg/Sb). I-V characteristics were measured in a wide temperature range (from 145 to 425 K) to find out the temperature dependence of the ideality factor, barrier height and series resistance for the different metal contacts used. We have also calculated the modified Richardson constant and barrier height from the plot of thermionic emission saturation current as a function of temperature. (C) 2006 Elsevier Ltd. All rights reserved.