Photoluminescence properties of boron doped InSe single crystals

Ertap H., BACIOĞLU A., Karabulut M.

JOURNAL OF LUMINESCENCE, vol.167, pp.227-232, 2015 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 167
  • Publication Date: 2015
  • Doi Number: 10.1016/j.jlumin.2015.06.045
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.227-232
  • Hacettepe University Affiliated: Yes


Undoped and boron doped InSe single crystals were grown by Bridgman-Stockbarger technique. The PL properties of undoped, 0.1% and 0.5% boron doped InSe single crystals have been investigated at different temperatures. PL measurements revealed four emission bands labeled as A, B, C and D in all the single crystals studied. These emission bands were associated with the radiative recombination of direct free excitons (n = 1), impurity-band transitions, donor-acceptor recombinations and structural defect related band (impurity atoms, defects, defect complexes, impurity-vacancy complex etc.), respectively. The direct free exciton (A) bands of undoped, 0.1% and 0.5% boron doped InSe single crystals were observed at 1.337 eV, 1.335 eV and 1330 eV in the PL spectra measured at 12 K, respectively. Energy positions and PL intensities of the emission bands varied with boron addition. The FWHM of direct free exciton band increases while the FWHM of the D emission band decreases with boron doping. Band gap energies of undoped and boron doped InSe single crystals were calculated from the PL measurements. It was found that the band gap energies of InSe single crystals decreased with increasing boron content. (C) 2015 Elsevier B.V. All rights reserved.