Steady-state and transient photoconductivity in hydrogenated amorphous silicon nitride films


Ay İ. , Tolunay H.

SOLAR ENERGY MATERIALS AND SOLAR CELLS, cilt.80, ss.209-216, 2003 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 80 Konu: 2
  • Basım Tarihi: 2003
  • Doi Numarası: 10.1016/j.solmat.2003.06.005
  • Dergi Adı: SOLAR ENERGY MATERIALS AND SOLAR CELLS
  • Sayfa Sayıları: ss.209-216

Özet

Amorphous SiNx:H films were prepared by the rf glow-discharge decomposition of ammonia/silane gas mixture with varying nitrogen content. The steady-state photoconductivity and its dependence on light intensity have been investigated in a-SiNx:H as a function of temperature between 100 and 420 K. The electron drift mobility of a set of SiNx: H samples has been determined from their steady-state photoconductivity and response time measurements. The results suggest that electron drift mobility of the samples was nearly unchanged for a low nitrogen content. Two samples containing lowest nitrogen showed higher photoconductivity than that of unalloyed sample within a temperature range including the room temperature. (C) 2003 Elsevier B.V. All rights reserved.