Frequency-dependent interface states and diode parameters of Au/n-Si Schottky diode with BOD-Z-EN interfacial layer in dark and under illumination

Tezcan A. O., Cavdar A. B., Eymur S., TUĞLUOĞLU N.

PHYSICA B-CONDENSED MATTER, 2025 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Publication Date: 2025
  • Doi Number: 10.1016/j.physb.2025.417273
  • Journal Name: PHYSICA B-CONDENSED MATTER
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Hacettepe University Affiliated: Yes

Abstract

The Au/BOD-Z-EN/n-Si Schottky barrier diode was studied using capacitance/conductance-voltage (C/G-V) and capacitance/conductance-frequency (C/G-f) characteristics under different illumination intensities and in the dark. The increment in C and G at the low-frequency regions, at which the surface states at the semiconductor-organic interface can easily follow the applied ac signal, could be attributed to the surface states. Under illumination, the appearance of peaks in conductance versus logarithm of frequency (Gp/omega- log f) graphs confirmed such interface trap states. It was found that the interface trap density (Dit) decreases from 5.81 x 1012 eV 1cm 2 to 2.87 x 1012 eV 1cm 2 while relaxation time (tau) decreases from 15.76 mu s to 3.94 mu s with increasing light intensity. The results showed that the barrier height (Phi B) dropped, going from 0.667 eV (in the dark) to 0.582 eV (100 mW/cm2). The donor concentration (ND) rose as the illumination intensity increased, going from 5.46 x 1015 cm 3 (in the dark) to 8.08 x 1015 cm 3 (100 mW/cm2).