Influence of electron-phonon interactions on the spectral properties of defects in hexagonal boron nitride
Quantum Information and Measurement, QIM 2019, Rome, İtalya, 4 - 06 Nisan 2019, cilt.Part F165-QIM 2019, (Tam Metin Bildiri)
- Yayın Türü: Bildiri / Tam Metin Bildiri
- Cilt numarası: Part F165-QIM 2019
- Doi Numarası: 10.1364/qim.2019.s4a.2
- Basıldığı Şehir: Rome
- Basıldığı Ülke: İtalya
- Hacettepe Üniversitesi Adresli: Hayır
Özet
We present temperature-dependent micro-PL studies on a single defect in hexagonal boron nitride. A zero-phonon line emission accompanied by Stokes and anti-Stokes phonon sidebands (˜ 6.5 meV) with a Debye-Waller factor of 0.59 is observed.