Influence of electron-phonon interactions on the spectral properties of defects in hexagonal boron nitride

Ari O., Firat V., Polat N., ÇAKIR Ö., Ates S.

Quantum Information and Measurement, QIM 2019, Rome, İtalya, 4 - 06 Nisan 2019, cilt.Part F165-QIM 2019 identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: Part F165-QIM 2019
  • Doi Numarası: 10.1364/qim.2019.s4a.2
  • Basıldığı Şehir: Rome
  • Basıldığı Ülke: İtalya
  • Hacettepe Üniversitesi Adresli: Hayır

Özet

We present temperature-dependent micro-PL studies on a single defect in hexagonal boron nitride. A zero-phonon line emission accompanied by Stokes and anti-Stokes phonon sidebands (˜ 6.5 meV) with a Debye-Waller factor of 0.59 is observed.