Defect induced ferromagnetism in carbon-doped ZnO thin films

Akbar S., Hasanain S. K. , Abbas M., ÖZCAN Ş. , Ali B., Shah S. I.

SOLID STATE COMMUNICATIONS, cilt.151, ss.17-20, 2011 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 151 Konu: 1
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1016/j.ssc.2010.10.035
  • Sayfa Sayıları: ss.17-20


We report on room temperature ferromagnetism in C-doped ZnO thin films prepared by electron beam evaporation Magnetization Hall effect X-ray photoemission spectroscopy (XPS) and X-ray diffraction studies have been conducted to investigate the source and nature of ferromagnetism in C-doped ZnO The samples were observed to have n-type conduction with the carrier concentration increasing with C doping XPS does not give any evidence for C substituted at the O site and is more consistent with the formation of C-O bonds and with the presence of C primarily in the +4 state It is suggested that the ferromagnetism originates in the development of Zn vacancies that are stabilized due to the incorporation of C in a high valence state (C4+) (C) 2010 Elsevier Ltd All rights reserved