Defect induced ferromagnetism in carbon-doped ZnO thin films

Akbar S., Hasanain S. K., Abbas M., ÖZCAN Ş., Ali B., Shah S. I.

SOLID STATE COMMUNICATIONS, vol.151, no.1, pp.17-20, 2011 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 151 Issue: 1
  • Publication Date: 2011
  • Doi Number: 10.1016/j.ssc.2010.10.035
  • Journal Name: SOLID STATE COMMUNICATIONS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.17-20
  • Hacettepe University Affiliated: Yes

Abstract

We report on room temperature ferromagnetism in C-doped ZnO thin films prepared by electron beam evaporation Magnetization Hall effect X-ray photoemission spectroscopy (XPS) and X-ray diffraction studies have been conducted to investigate the source and nature of ferromagnetism in C-doped ZnO The samples were observed to have n-type conduction with the carrier concentration increasing with C doping XPS does not give any evidence for C substituted at the O site and is more consistent with the formation of C-O bonds and with the presence of C primarily in the +4 state It is suggested that the ferromagnetism originates in the development of Zn vacancies that are stabilized due to the incorporation of C in a high valence state (C4+) (C) 2010 Elsevier Ltd All rights reserved