High temperature coefficient of resistance and low noise tungsten oxide doped amorphous vanadium oxide thin films for microbolometer applications

Celik O., DUMAN M.

THIN SOLID FILMS, vol.691, 2019 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 691
  • Publication Date: 2019
  • Doi Number: 10.1016/j.tsf.2019.137590
  • Journal Name: THIN SOLID FILMS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Hacettepe University Affiliated: Yes


In this study, we report tungsten oxide (WO3) doped vanadium target in order to sputter amorphous vanadium tungsten oxide (a-VWOx) thin films by reactive direct-current magnetron sputtering technique. No post annealing and post oxidation steps were applied to improve bolometric properties. Thin films with high temperature coefficient of resistance, up to 3.02%/K, were prepared with resistivity range of 1-10 Omega cm thereby controlling the oxygen flow rate and sputtering conditions. Thin film composition was determined using X-ray photoelectron spectroscopy analysis which showed that the film has a mixed phase of V2O5, VO2 and V2O3. The noise level of the deposited film at 20 Hz was calculated as 1.9 x 10(-15) V-2/Hz from the noise spectrum density analysis. This noise level was found out to be comparable to the literature for VOx films deposited by ion beam deposition technique.