In this study, we report tungsten oxide (WO3) doped vanadium target in order to sputter amorphous vanadium tungsten oxide (a-VWOx) thin films by reactive direct-current magnetron sputtering technique. No post annealing and post oxidation steps were applied to improve bolometric properties. Thin films with high temperature coefficient of resistance, up to 3.02%/K, were prepared with resistivity range of 1-10 Omega cm thereby controlling the oxygen flow rate and sputtering conditions. Thin film composition was determined using X-ray photoelectron spectroscopy analysis which showed that the film has a mixed phase of V2O5, VO2 and V2O3. The noise level of the deposited film at 20 Hz was calculated as 1.9 x 10(-15) V-2/Hz from the noise spectrum density analysis. This noise level was found out to be comparable to the literature for VOx films deposited by ion beam deposition technique.