Creation and annealing kinetics of light induced metastable defects in a-Si1-xCx : H


Kodolbas A., Oktu O.

Conference of the NATO Advanced-Study-Institute on Photovoltaic and Photoactive Materials, SOZOPOL, Bulgaria, 9 - 21 September 2001, vol.80, pp.257-260 identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 80
  • City: SOZOPOL
  • Country: Bulgaria
  • Page Numbers: pp.257-260

Abstract

We have used the Constant Photocurrent Method and steady-state photoconductivity measurements to investigate the creation and annealing kinetics of light induced metastable defects, and their effect on photocarrier lifetimes, in a set of good quality a-Si1-xCx:H alloys (x less than or equal to 0.11) at room temperature. The annealing activation energy distribution for the alloys was deduced using the method proposed by Hata and Wagner [I]. A narrow Gaussian distribution of annealing activation energies, peaking at about I eV, accounts for the observed annealing behaviour for the unalloyed sample. For the alloys, the peak positions of the Gaussian distributions shift to higher energies, and their half-widths decrease with increasing carbon content. The relationship between the inverse mobility-lifetime product and the light induced metastable defect density during the creation and annealing cycles were also investigated for these alloys.