OPTICAL-ABSORPTION COEFFICIENTS IN A-SI1-XCX-H


OKTU O., LAUWERENS W., USALA S., ADRIAENSSENS G., VERBEKE O., ERAY A. , ...Daha Fazla

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, cilt.11, ss.47-50, 1992 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 11
  • Basım Tarihi: 1992
  • Doi Numarası: 10.1016/0921-5107(92)90188-f
  • Dergi Adı: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
  • Sayfa Sayıları: ss.47-50

Özet

Thin film samples of hydrogenated amorphous silicon carbide with varying carbon content were prepared by conventional plasma deposition from an SiH4-CH4 gas mixture. Optical transmission and reflection spectroscopy together with constant-photoconductivity measurements show that the widening of the optical gap with increasing carbon content is accompanied by an increased optical absorption at lower energies.