The formation of anomalous Hall effect depending on W atoms in ZnO thin films

CAN M. M. , Shah S. I. , Firat T.

APPLIED SURFACE SCIENCE, vol.303, pp.76-83, 2014 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 303
  • Publication Date: 2014
  • Doi Number: 10.1016/j.apsusc.2014.02.079
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.76-83


article investigates the effects of intrinsic point defects and extrinsic W atoms on magneto electrical properties in the ZnO lattice. The analyses were accomplished for similar to 0.5% W including ZnO thin films, grown using a radio frequency (RF) magnetron sputtering system. The polarized spin current dependent magnetic formation was investigated by longitudinal and transverse magneto electrical measurements in a temperature range of 5 K to 300 K. The positive magneto resistivity (PMR) ratios reached 28.8%, 12.7%, and 17.6% at 5 K for thin films, having different post-deposition annealing conditions as a consequence of ionic W dependent defects in the lattice. Furthermore, an anomalous Hall effect, originating from polarized spin currents, was understood from the split in Hall resistance versus magnetic field (R-xy(H)) curves for the thin film with high amount of Zn2+ and W6+ ionic defects. (C) 2014 Elsevier B.V. All rights reserved.