Long infrared detector based on Se-hyperdoped black silicon

TANSEL T., Aydin O.

JOURNAL OF PHYSICS D-APPLIED PHYSICS, no.29, 2024 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Publication Date: 2024
  • Doi Number: 10.1088/1361-6463/ad3b08
  • Journal Name: JOURNAL OF PHYSICS D-APPLIED PHYSICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Hacettepe University Affiliated: Yes

Abstract

Infrared (IR) detectors play crucial roles in various applications. A significant milestone in advancing the next-generation low-cost silicon technology is the enhancement of hyperdoped black silicon (b-Si) photodetectors, particularly within the IR wavelength range. In this study, highly selenium (Se)-doped b-Si photodetectors. Through the optimization of laser parameters and the application of SiO2 passivation, significant enhancements were achieved in responsivity (R), external quantum efficiency, and specific detectivity (D*) within the long-wave IR range, culminating in a D* of 1.3 x 10(12) Jones at 9.5 mu m. Additionally, the Se: b-Si photodetectors maintain a D* of approximately 1.3 x 10(11) Jones at critical optical telecommunications wavelengths of 1.3 mu m and 1.5 mu m. These results significantly contribute to the advancement of IR photodetector technology and provide a foundation for the development of highly efficient, low-cost, and broadband IR detectors for Si photonic applications.