Electrical and optical properties of point defects in ZnO thin films

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Atıf İçin Kopyala

CAN M. M., Shah S. I., Doty M. F., Haughn C. R., Firat T.

JOURNAL OF PHYSICS D-APPLIED PHYSICS, cilt.45, sa.19, 2012 (SCI-Expanded)

• Yayın Türü: Makale / Tam Makale
• Cilt numarası: 45 Sayı: 19
• Basım Tarihi: 2012
• Doi Numarası: 10.1088/0022-3727/45/19/195104
• Dergi Adı: JOURNAL OF PHYSICS D-APPLIED PHYSICS
• Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Hacettepe Üniversitesi Adresli: Evet

Özet

We show that the deposition of ZnO films under varying oxygen partial pressure and annealing conditions allows for the controllable formation of specific defects. Using x-ray diffraction and photoluminescence, we characterize the defects formed and show that these defects are responsible for changes in film carrier density, carrier type, sheet resistivity and mobility.