Electrical and optical properties of point defects in ZnO thin films


CAN M. M. , Shah S. I. , Doty M. F. , Haughn C. R. , Firat T.

JOURNAL OF PHYSICS D-APPLIED PHYSICS, cilt.45, sa.19, 2012 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 45 Konu: 19
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1088/0022-3727/45/19/195104
  • Dergi Adı: JOURNAL OF PHYSICS D-APPLIED PHYSICS

Özet

We show that the deposition of ZnO films under varying oxygen partial pressure and annealing conditions allows for the controllable formation of specific defects. Using x-ray diffraction and photoluminescence, we characterize the defects formed and show that these defects are responsible for changes in film carrier density, carrier type, sheet resistivity and mobility.