Electrical and optical properties of point defects in ZnO thin films

CAN, Musa; Shah, S.; Doty, Matthew; Haughn, Chelsea; Firat, Tezer

doi:10.1088/0022-3727/45/19/195104

Electrical and optical properties of point defects in ZnO thin films

CAN M. M., Shah S. I., Doty M. F., Haughn C. R., Firat T.

JOURNAL OF PHYSICS D-APPLIED PHYSICS, cilt.45, sa.19, 2012 (SCI-Expanded, Scopus)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 45 Sayı: 19
Basım Tarihi: 2012
Doi Numarası: 10.1088/0022-3727/45/19/195104
Dergi Adı: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Hacettepe Üniversitesi Adresli: Evet

Özet

We show that the deposition of ZnO films under varying oxygen partial pressure and annealing conditions allows for the controllable formation of specific defects. Using x-ray diffraction and photoluminescence, we characterize the defects formed and show that these defects are responsible for changes in film carrier density, carrier type, sheet resistivity and mobility.