Electrical and optical properties of point defects in ZnO thin films

CAN M. M., Shah S. I., Doty M. F., Haughn C. R., Firat T.

JOURNAL OF PHYSICS D-APPLIED PHYSICS, vol.45, no.19, 2012 (SCI-Expanded) identifier identifier


We show that the deposition of ZnO films under varying oxygen partial pressure and annealing conditions allows for the controllable formation of specific defects. Using x-ray diffraction and photoluminescence, we characterize the defects formed and show that these defects are responsible for changes in film carrier density, carrier type, sheet resistivity and mobility.