Bottom-up fabrication of n-ZnO-based memristor and p-Cu2O/n-ZnO heterojunction diode using electroless deposition

SAKA YILDIRIM K., GÖKCEN D.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.33, sa.27, ss.21811-21821, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 33 Sayı: 27
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1007/s10854-022-08968-2
  • Dergi Adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, MEDLINE, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.21811-21821
  • Hacettepe Üniversitesi Adresli: Evet

Özet

This study introduces a low-cost and feasible electroless deposition technique utilized to fabricate an n-ZnO-based memristor and p-Cu2O/n-ZnO heterojunction diode using a bottom-up approach. Memristor is a two-terminal circuit element with current-voltage (I-V) characteristics presenting non-linear hysteresis. p-n junctions, which have an essential role in solid-state devices, form the basis of many electronic applications. The typical p-n junction occurs at the interface of p and n-type semiconductors. In this study, zinc oxide and cupric oxide thin films are electroless deposited by the immersion method. Elemental and structural analyses are performed using energy-dispersive X-ray spectroscopy (EDX) combined with scanning electron microscopy (SEM), and X-ray diffraction (XRD). Thicknesses of the resulting thin films are determined by cross-sectional SEM images. I-V measurements show the forming-free bipolar resistive switching characteristic for ZnO-based memristor and p-n junction behavior for p-Cu2O/n-ZnO. In addition, both ZnO-based memristor and p-Cu2O/n-ZnO devices are tested for endurance, and the results show stability in the performance.