Electrical and optical properties of glow-discharge a-SiOx : H (x < 2)


Bacioglu A. , Kodolbaş A. O. , Öktü Ö.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.14, pp.737-738, 2003 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 14
  • Publication Date: 2003
  • Doi Number: 10.1023/a:1026155826628
  • Title of Journal : JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Page Numbers: pp.737-738

Abstract

Hydrogenated amorphous silicon-oxygen alloy (a-SiOx: H) films were deposited by r.f. glow-discharge decomposition of a SiH4 + CO2 gas mixture at a substrate temperature of 300degreesC. The optical band gaps of the samples were found to change between 1.65 and 2.73 eV by varying the oxygen content from 4.5 to 64.2 at%. While both the room-temperature photo- and dark-conductivity decrease with oxygen alloying, for oxygen contents below 11.9 at% the measured conductivities are comparable to those of unalloyed a-Si:H. In contrast, the deep-defect density and Urbach parameter continuously increase with oxygen alloying. (C) 2003 Kluwer Academic Publishers.