Low frequency noise behavior at Reverse Bias Region in InAs GaSb Superlattice Photodiodes on Mid Wave Infrared

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TANSEL T., Kutluer K., Muti A., Ömer S., AYDINLI A., TURAN R.

Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87040Y, Baltimore, Maryland, USA, United States Of America, 29 April - 01 May 2013 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Doi Number: 10.1117/12.2016388
  • City: Baltimore, Maryland, USA
  • Country: United States Of America
  • Keywords: Mid-Wave-Infrared Photodiode, Passivation, Noise Characterization, InAs/GaSb, surface activation energy
  • Hacettepe University Affiliated: Yes


We describe a relationship between the noise characterization and activation energy of InAs/GaSb superlattice Mid-Wavelength-Infrared photodiodes for different passivation materials applied to the device. The noise measurements exhibited a frequency dependent plateau (i.e. 1/f-noise characteristic) for unpassivated as well as Si3N4 passivated samples whereas 1/f-type low noise suppression (i.e. frequency independent plateau) with a noise current reduction of more than one order of magnitude was observed for SiO2 passivation. For reverse bias values below -0.15V, the classical Schottky-noise calculation alone did not appear to describe the noise mechanism in a SL noise behavior, which shows a divergence between theoretically and experimentally determined noise values. We identify that, the additional noise appears, with and without passivation, at the surface activation energy of < 60 meV and is inversely proportional to the reverse bias. This is believed to be caused by the surface dangling-bonds (as well as surface states) whose response is controlled by the applied reverse bias. The calculated noise characteristics showed a good agreement with the experimental data.