Trapping parameters of repulsive centers in SbSI single crystals

Ozdemir S., Firat T., Mamedov A.

MATERIALS RESEARCH BULLETIN, vol.39, pp.1065-1073, 2004 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 39
  • Publication Date: 2004
  • Doi Number: 10.1016/s0025-5408(04)00060-1
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1065-1073
  • Hacettepe University Affiliated: No


Charge trapping centers in antimony sulphide iodide (SbSI) single crystals have been investigated by the use of thermally stimulated current (TSC) technique. The TSC spectrum consists of only one apparent peak which is found to be associated with a single trapping level. Those traps are experimentally found to obey the monomolecular kinetics. The trapping parameters as the energy depth, temperature dependent frequency factor and capture cross section together with the concentrations of the corresponding discrete trapping level are determined. The TSC signal is found to be strongly dependent on illumination temperature of the sample and this is explained by the model in which the traps are considered to be surrounded by repulsive potential barriers. (C) 2004 Elsevier Ltd. All rights reserved.