Ab initio vibrational and dielectric properties of chalcopyrite CuInS2


Eryigit R., Parlak C., Eryigit R.

EUROPEAN PHYSICAL JOURNAL B, vol.33, no.3, pp.251-254, 2003 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 33 Issue: 3
  • Publication Date: 2003
  • Doi Number: 10.1140/epjb/e2003-00163-x
  • Journal Name: EUROPEAN PHYSICAL JOURNAL B
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.251-254
  • Hacettepe University Affiliated: No

Abstract

We have performed a first-principles study of structural, dynamical, and dielectric properties of the chalcopyrite semiconductor CuInS2. The calculations have been carried out within the local density functional approximation using norm-conserving pseudopotentials and a plane-wave basis. Born effective charge tensors, dielectric permitivity tensors, the phonon frequencies at the Brillouin zone center and mode oscillator strengths are calculated using density functional perturbation theory. The calculated properties agree with infrared and Raman measurements.