We have utilized multiple linear regression analysis using up to date distributions of annealing activation energies given in the literature in order to investigate the variation of these distributions with light induced degradation parameters as light intensity, degradation duration and degradation temperature in a-Si:H. We have also optimised these parameters using multiobjective optimisation method. Results we have obtained are in a wall, complementary and in accord with suggestions in our previous works [J. Non-Cryst. Solids 255 (1999) 132; Mater. Sci. Eng. B 95(1) (2002) 67], where we have showed both at room temperature and at low temperatures defects with higher annealing activation energies are created at higher light intensities. (C) 2004 Elsevier B.V. All rights reserved.