Influence of the nitrogen concentration on the electrical characteristic of hydrogenated amorphous silicon nitride (a-SiNx:H) based Schottky diodes | AVESİS

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Influence of the nitrogen concentration on the electrical characteristic of hydrogenated amorphous silicon nitride (a-SiNx:H) based Schottky diodes

Atıf İçin Kopyala

AY İ. , Tolunay H.

Turkish Journal of Physics, cilt.34, sa.2, ss.83-96, 2010 (SCI Expanded İndekslerine Giren Dergi)

Cilt numarası: 34 Konu: 2
Basım Tarihi: 2010
Doi Numarası: 10.3906/fiz-0908-42
Dergi Adı: Turkish Journal of Physics
Sayfa Sayıları: ss.83-96