Influence of the nitrogen concentration on the electrical characteristic of hydrogenated amorphous silicon nitride (a-SiNx:H) based Schottky diodes

AY İ. , Tolunay H.

Turkish Journal of Physics, vol.34, no.2, pp.83-96, 2010 (Journal Indexed in SCI Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 34 Issue: 2
  • Publication Date: 2010
  • Doi Number: 10.3906/fiz-0908-42
  • Title of Journal : Turkish Journal of Physics
  • Page Numbers: pp.83-96