Gold deposition on GaAs(001) surfaces: Molecular-dynamics simulations

Erkoc S., Amirouche L., Rouaiguia L.

INTERNATIONAL JOURNAL OF MODERN PHYSICS C, cilt.13, sa.6, ss.759-769, 2002 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 13 Sayı: 6
  • Basım Tarihi: 2002
  • Doi Numarası: 10.1142/s0129183102003498
  • Dergi Adı: INTERNATIONAL JOURNAL OF MODERN PHYSICS C
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.759-769
  • Hacettepe Üniversitesi Adresli: Hayır

Özet

We have simulated the gold deposition on arsenic and gallium terminated GaAs(001) surfaces at low and room temperatures. It has been found that gallium terminated surface is relatively less stable in comparison to the arsenic terminated surface. On the other hand, a single gold adatom on the surface has different characteristics than full coverage gold atoms on the surface; a single gold atom diffuses into the surface at room temperature. Simulations have been performed by considering classical molecular-dynamics technique using an empirical many-body potential energy function comprising two- and three-body atomic interactions.