Photoluminescence of hydrogenated amorphous silicon suboxides

Bacioglu A., Kodolbaş A. O., Öktü Ö.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol.7, no.1, pp.499-502, 2005 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 7 Issue: 1
  • Publication Date: 2005
  • Journal Name: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.499-502
  • Hacettepe University Affiliated: Yes

Abstract

The photoluminescence properties of a hydrogenated amorphous silicon suboxide film with 26.2 at.% oxygen has been studied in the as-deposited state and after post annealing procedures at elevated temperatures. Two typical silicon suboxide PL bands, at 2.1 eV and at 1.85 eV, were observed. From temperature dependent measurements, it was demonstrated that the intensity of the 2.1 eV PL band is thermally activated, with an activation energy of 0.49 eV. The 2.1 eV band is attributed to oxygen related defect transitions, whereas the 1.85 eV band may be attributed to localised to localised state transitions.