Electronic structure of epitaxially grown chromium-doped Bi2Te3 films

Hamodi A., HÖKELEK T., Hamodi Y., Mahmood N. B., Naji K. K.

PHYSICA B-CONDENSED MATTER, vol.596, 2020 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 596
  • Publication Date: 2020
  • Doi Number: 10.1016/j.physb.2020.412413
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Hacettepe University Affiliated: Yes


The magnetic interaction on this type of material is promising to rise some exotic phenomena. Currently, the magnetic doping with x = 0.075 on the electronic structure of Cr-x:Bi2-xTe3 is investigated. We observed that the topological phase was kept for that amount of doping concentration. We probed the signature of the 3d states via element-specific probing of the valence band by ARPES. The electronic bands for doped TI showed broadening due to the substitutional disorder and shifting to higher energies. We assumed the existence of the small effects of contributions of p-d exchange as well as ferromagnetic super exchange on our system, which keep gapless surface state. Decapping 100 nm of Te cap needs 165 min for sputtering process and 35 min of annealing at 195 degrees C. The work shows a path to change the topological properties of TI, which is of significance for practical application based on TI and future primal research.