Analysis of the structural parameters of an a-Si : H n(+)-i-n(+) structure by numerical simulations


Eray A. , NOBILE G.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.14, pp.735-736, 2003 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 14
  • Publication Date: 2003
  • Doi Number: 10.1023/a:1026103809789
  • Title of Journal : JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Page Numbers: pp.735-736

Abstract

In this study, we discuss measurements of the J-Vcharacteristics of an a-Si : H n(+)-i-n(+) structure, and the results of numerical simulation using the AMPS-1D simulation program. Application of the AMPS simulation model to the sample structures considered allows us to determine the structural properties of the a-Si:H n(+)-i-n(+) structure. The one-dimensional simulation program was examined in n(+)-i-n(+) structures with different qualities and thicknesses of the i-layer. We find that the n(+)/i interface is more abrupt for a device with a high density of states (DOS), resulting in high values of the activation energy (E-act). In contrast, thin samples of good quality (low DOS) give low values of Eat. Analysis by numerical modeling confirms the experimental results. (C) 2003 Kluwer Academic Publishers.