Lateral photovoltage measurements in hydrogenated amorphous silicon and silicon-oxygen thin films

Kodolbas A., Comak B., Bacioglu A., Oktu O.

JOURNAL OF NON-CRYSTALLINE SOLIDS, cilt.351, sa.5, ss.426-431, 2005 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 351 Sayı: 5
  • Basım Tarihi: 2005
  • Doi Numarası: 10.1016/j.jnoncrysol.2005.01.005
  • Dergi Adı: JOURNAL OF NON-CRYSTALLINE SOLIDS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.426-431
  • Hacettepe Üniversitesi Adresli: Hayır

Özet

Hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon-oxide alloy films (a-SiOx:H) were investigated by temperature dependence of lateral photovoltage (LPV) measurements. The suboxide sample with [0] = 27 at.%, was found to exhibit larger LPV compared to the unalloyed sample. It is difficult to simply correlate LPV measurements to related diffusion length measurements, only. On the other hand, the observed magnitude of LPV in a-Si:H and its decrease with temperature, could be explained based on an internal electric field induced by diffusion electron and hole currents, and multiple trapping of the photocarriers. (c) 2005 Elsevier B.V. All rights reserved.