Lateral photovoltage measurements in hydrogenated amorphous silicon and silicon-oxygen thin films

Kodolbas, AO; Comak, B; Bacioglu, A; Oktu, O

doi:10.1016/j.jnoncrysol.2005.01.005

Lateral photovoltage measurements in hydrogenated amorphous silicon and silicon-oxygen thin films

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Kodolbas A., Comak B., Bacioglu A., Oktu O.

JOURNAL OF NON-CRYSTALLINE SOLIDS, vol.351, no.5, pp.426-431, 2005 (SCI-Expanded)

Publication Type: Article / Article
Volume: 351 Issue: 5
Publication Date: 2005
Doi Number: 10.1016/j.jnoncrysol.2005.01.005
Journal Name: JOURNAL OF NON-CRYSTALLINE SOLIDS
Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Page Numbers: pp.426-431
Hacettepe University Affiliated: No

Abstract

Hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon-oxide alloy films (a-SiOx:H) were investigated by temperature dependence of lateral photovoltage (LPV) measurements. The suboxide sample with [0] = 27 at.%, was found to exhibit larger LPV compared to the unalloyed sample. It is difficult to simply correlate LPV measurements to related diffusion length measurements, only. On the other hand, the observed magnitude of LPV in a-Si:H and its decrease with temperature, could be explained based on an internal electric field induced by diffusion electron and hole currents, and multiple trapping of the photocarriers. (c) 2005 Elsevier B.V. All rights reserved.