Patterning Titanium Dioxide Based Memristors Using Electron Beam Lithography

Keser Y. I., Yildirim K., GÖKCEN D.

2nd International Congress on Human-Computer Interaction, Optimization and Robotic Applications (HORA), Turkey, 26 - 27 June 2020, pp.241-248 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume:
  • Doi Number: 10.1109/hora49412.2020.9152883
  • Country: Turkey
  • Page Numbers: pp.241-248
  • Keywords: Memristor, titanium dioxide, electron beam lithography, resistive switching
  • Hacettepe University Affiliated: Yes


This paper reports a comprehensive study on the fabrication of titanium dioxide-based memristors, patterned using electron beam lithography method. Memristor, one of the state-of-the-art technology devices with non-volatile memory, has gained significant attention in recent years. The properties of the memristor, such as non-volatility, high speed, and low cost, allow it to simplify memory and storage hierarchy. Hence, they are ideal for performing bio-inspired neural networks through their ability to combine memory and computation in one physical structure. For memristors to be used as an electronic component in various applications, it is necessary to go beyond laboratory research studies. Therefore, it is essential to develop the fabrication process so as to enable the mass production of these devices. In this context, various optimization studies were carried out primarily to provide that the structures of memristor successfully show memristive behavior during the fabrication process steps. Throughout the fabrication process, the bottom electrode, active layer, and top electrode of memristors were patterned by using electron beam lithography. In addition, the sputtering method is used for the deposition of electrodes, and the atomic layer deposition method is used for the active layer. Following the fabrication process, scanning electron microscopy is used to characterize the surface properties of the memristor structure. Current-voltage measurements were carried out to characterize the electrical behaviors of memristors and to test their endurance. As a result of measurements, the fabricated devices have shown memristive behavior successfully and good endurance for 1000 cycles.