Structural Comparison of Wide Band-Gap Semiconductors with Silicon Semiconductors and Performance Oriented Comparison for a High Switching Frequency Flyback Converter

Gok G., Alisar I., GÖKCEN D.

2nd International Symposium on Multidisciplinary Studies and Innovative Technologies (ISMSIT), Kizilcahamam, Türkiye, 19 - 21 Ekim 2018, ss.119-123 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Doi Numarası: 10.1109/ismsit.2018.8567069
  • Basıldığı Şehir: Kizilcahamam
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.119-123
  • Hacettepe Üniversitesi Adresli: Evet

Özet

Wide Band Gap (WBG) semiconductors based on Silicon Carbide (SiC) and Gallium Nitride (GaN) are promising technologies for power electronics, because of their improved features which are higher critical electrical field, higher energy bandgap, and more thermal conductivity electron mobility. New abilities of such switching devices increase the overall efficiency of the power electronics applications. To learn the basics of Si, SiC and GaN MOSFETs, the structure of them will be investigated briefly. The effects on the RDS-ON and gate charge will be studied. The comparison of Si, SiC, and GaN MOSFETs is reviewed with respect to power electronics issues. Also, high switching frequency flyback converter leakage inductance case has been designed with the compared switching devices.