Steady-state and transient photoconductivity in hydrogenated amorphous silicon nitride films


Ay İ., Tolunay H.

SOLAR ENERGY MATERIALS AND SOLAR CELLS, vol.80, no.2, pp.209-216, 2003 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 80 Issue: 2
  • Publication Date: 2003
  • Doi Number: 10.1016/j.solmat.2003.06.005
  • Journal Name: SOLAR ENERGY MATERIALS AND SOLAR CELLS
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.209-216

Abstract

Amorphous SiNx:H films were prepared by the rf glow-discharge decomposition of ammonia/silane gas mixture with varying nitrogen content. The steady-state photoconductivity and its dependence on light intensity have been investigated in a-SiNx:H as a function of temperature between 100 and 420 K. The electron drift mobility of a set of SiNx: H samples has been determined from their steady-state photoconductivity and response time measurements. The results suggest that electron drift mobility of the samples was nearly unchanged for a low nitrogen content. Two samples containing lowest nitrogen showed higher photoconductivity than that of unalloyed sample within a temperature range including the room temperature. (C) 2003 Elsevier B.V. All rights reserved.