Influence of the nitrogen concentration on the electrical characteristic of hydrogenated amorphous silicon nitride (a-SiNx:H) based Schottky diodes


AY İ., Tolunay H.

Turkish Journal of Physics, vol.34, no.2, pp.83-96, 2010 (Peer-Reviewed Journal) identifier

  • Publication Type: Article / Article
  • Volume: 34 Issue: 2
  • Publication Date: 2010
  • Doi Number: 10.3906/fiz-0908-42
  • Journal Name: Turkish Journal of Physics
  • Journal Indexes: Science Citation Index Expanded, Scopus, TR DİZİN (ULAKBİM)
  • Page Numbers: pp.83-96