N-structure based on InAs/AlSb/GaSb superlattice photodetectors

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HOŞTUT M., Alyoruk M., TANSEL T., Kilic A., TURAN R., Aydinli A., ...Daha Fazla

SUPERLATTICES AND MICROSTRUCTURES, cilt.79, ss.116-122, 2015 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 79
  • Basım Tarihi: 2015
  • Doi Numarası: 10.1016/j.spmi.2014.12.022
  • Dergi Adı: SUPERLATTICES AND MICROSTRUCTURES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.116-122
  • Anahtar Kelimeler: Infrared detector, III-V semiconductors, Type-II superlattice, InAs/AlSb/GaSb, Photodetectors, MWIR, ELECTRON-GAS
  • Hacettepe Üniversitesi Adresli: Evet

Özet

We have studied the theoretical and experimental properties of InAs/AlSb/GaSb based type-II superlattice (T2SL) pin photodetector called N-structure. Electronic properties of the superlattice such as HH-LH splitting energies was investigated using first principles calculations taking into account InSb and AlAs as possible interface transition alloys between AlSb/InAs layers and individual layer thicknesses of GaSb and InAs. T2SL N-structure was optimized to operate as a MWIR detector based on these theoretical approaches tailoring the band gap and HH-LH splitting energies with InSb transition layers between InAs/AlSb interfaces. Experimental results show that AlSb layers in the structure act as carrier blocking barriers reducing the dark current. Dark current density and RoA product at 125 K were obtained as 1.8 x 10(-6) A cm(-2) and 800 Omega cm(2) at zero bias, respectively. The specific detectivity was measured as 3 x 10(12) Jones with cut-off wavelengths of 4.3 mu m at 79 K reaching to 2 x 10(9) Jones and 4.5 mu m at 255 K. (C) 2014 Elsevier Ltd. All rights reserved.