Salihoglu, O. Et Al. 2013. Passivation of type II InAs GaSb superlattice photodetectors withatomic layer deposited Al2O3. Proc. SPIE, Infrared Technology and Applications , (Baltimore, Maryland, United States Of America).

Salihoglu, O., Muti, A., Kutluer, K., TANSEL, T., Coskun, K., TURAN, R., ... AYDINLI, A.(2013). Passivation of type II InAs GaSb superlattice photodetectors withatomic layer deposited Al2O3 . Proc. SPIE, Infrared Technology and Applications, Baltimore, Maryland, United States Of America

Salihoglu, Omer Et Al. "Passivation of type II InAs GaSb superlattice photodetectors withatomic layer deposited Al2O3," Proc. SPIE, Infrared Technology and Applications, Baltimore, Maryland, United States Of America, 2013

Salihoglu, Omer Et Al. "Passivation of type II InAs GaSb superlattice photodetectors withatomic layer deposited Al2O3." Proc. SPIE, Infrared Technology and Applications , Baltimore, Maryland, United States Of America, 2013

Salihoglu, O. Et Al. (2013) . "Passivation of type II InAs GaSb superlattice photodetectors withatomic layer deposited Al2O3." Proc. SPIE, Infrared Technology and Applications , Baltimore, Maryland, United States Of America.

@conferencepaper{conferencepaper, author={Omer Salihoglu Et Al. }, title={Passivation of type II InAs GaSb superlattice photodetectors withatomic layer deposited Al2O3}, congress name={Proc. SPIE, Infrared Technology and Applications}, city={Baltimore, Maryland}, country={United States Of America}, year={2013}}