Bi, C. Et Al. 2019. Interfacial engineering of SOT-MRAM to modulate atomic diffusion and enable PMA stability > 400 degrees C. International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) , (Hsinchu, Taiwan).

Bi, C., Lin, S., Li, X., Simsek, T., Song, M., Tsai, W., ... Wang, S. X.(2019). Interfacial engineering of SOT-MRAM to modulate atomic diffusion and enable PMA stability > 400 degrees C . International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, Taiwan

Bi, Chong Et Al. "Interfacial engineering of SOT-MRAM to modulate atomic diffusion and enable PMA stability > 400 degrees C," International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, Taiwan, 2019

Bi, Chong Et Al. "Interfacial engineering of SOT-MRAM to modulate atomic diffusion and enable PMA stability > 400 degrees C." International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) , Hsinchu, Taiwan, 2019

Bi, C. Et Al. (2019) . "Interfacial engineering of SOT-MRAM to modulate atomic diffusion and enable PMA stability > 400 degrees C." International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) , Hsinchu, Taiwan.

@conferencepaper{conferencepaper, author={Chong Bi Et Al. }, title={Interfacial engineering of SOT-MRAM to modulate atomic diffusion and enable PMA stability > 400 degrees C}, congress name={International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)}, city={Hsinchu}, country={Taiwan}, year={2019}}